APTM120A15FG
MOSFET 2N-CH 1200V 60A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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This Microchip Technology MOSFET array, part number APTM120A15FG, is a 2-channel, 1200V device with a continuous drain current (Id) of 60A at 25°C. Featuring a maximum power dissipation of 1250W, this component is designed for chassis mounting within the SP6 package. Key electrical characteristics include a drain-to-source voltage (Vdss) of 1200V, a typical Rds On of 175mOhm at 30A and 10V, and a gate charge (Qg) of 748nC at 10V. Input capacitance (Ciss) is specified at 20600pF maximum at 25V. The operating temperature range is -40°C to 150°C (TJ). This Metal Oxide MOSFET technology is suitable for applications in power factor correction, induction heating, and high-voltage power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1250W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Input Capacitance (Ciss) (Max) @ Vds | 20600pF @ 25V |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 748nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | SP6 |
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