APTM10TAM09FPG
MOSFET 6N-CH 100V 139A SP6-PManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM10TAM09FPG is a 6-channel N-channel MOSFET array featuring a 3-phase bridge configuration. This component offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 139A at 25°C. The low on-resistance of 10mOhm at 69.5A and 10V (Rds On) makes it suitable for high-power applications. With a maximum power dissipation of 390W and a chassis mount design, it is engineered for efficient thermal management. Key parameters include a gate charge (Qg) of 350nC at 10V and input capacitance (Ciss) of 9875pF at 25V. The APTM10TAM09FPG operates within a temperature range of -40°C to 150°C (TJ) and is supplied in Bulk packaging within an SP6-P package. This MOSFET array finds application in industrial power systems and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 139A |
| Input Capacitance (Ciss) (Max) @ Vds | 9875pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 69.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | SP6-P |
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