APTM10HM19FT3G
MOSFET 4N-CH 100V 70A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microchip Technology APTM10HM19FT3G is a 100V, 4-channel N-channel MOSFET array designed for efficient power switching applications. This component offers a continuous drain current of 70A per channel at 25°C and a low on-resistance of 21mOhm at 35A and 10V Vgs. The device features a maximum power dissipation of 208W and a gate charge of 200nC at 10V. With an input capacitance of 5100pF at 25V, it is suitable for applications requiring high current density and fast switching. The APTM10HM19FT3G utilizes Metal Oxide technology and is housed in a chassis-mount SP3 package, operating within a temperature range of -40°C to 150°C. This MOSFET array is commonly employed in industrial motor control, power supplies, and electric vehicle systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 35A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SP3 |
Request a Quote
Clients Also Buy
MSCM20AM058G
MOSFET 2N-CH 200V 280A LP8
MSCSM170HRM11NG
SIC 4N-CH 1700V/1200V 226A
APTC60TAM21SCTPAG
MOSFET 6N-CH 600V 116A SP6-P
