APTM10HM09FT3G
MOSFET 4N-CH 100V 139A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM10HM09FT3G is a 4 N-channel MOSFET array featuring a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 139A at 25°C. This component is designed for chassis mounting, offering a robust solution for high-power applications. The MOSFET array exhibits a low on-resistance (Rds On) of 10mOhm at 69.5A and 10V, contributing to efficient power conversion. With a maximum power dissipation of 390W and an operating temperature range of -40°C to 150°C, the APTM10HM09FT3G is suitable for demanding industries such as automotive, industrial power supplies, and electric vehicle powertrains. Key electrical parameters include a gate charge (Qg) of 350nC at 10V and an input capacitance (Ciss) of 9875pF at 25V. The device is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 139A |
| Input Capacitance (Ciss) (Max) @ Vds | 9875pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 69.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | SP3 |