APTM10HM05FG
MOSFET 4N-CH 100V 278A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology's APTM10HM05FG is a 100V, 4-channel N-channel MOSFET array designed for high-power applications. This chassis-mount device features a continuous drain current (Id) of 278A at 25°C and a low on-resistance (Rds On) of 5mOhm at 125A and 10V, enabling efficient power delivery with a maximum power dissipation of 780W. The array's 4 N-channel configuration, arranged in a full bridge, is suitable for demanding power conversion and motor control tasks. Key parameters include a gate charge (Qg) of 700nC at 10V and input capacitance (Ciss) of 20000pF at 25V. Operating within a temperature range of -40°C to 150°C (TJ), this MOSFET array is ideal for industrial, automotive, and renewable energy systems. The SP6 package provides robust thermal management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 780W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 278A |
| Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 125A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 700nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | SP6 |
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