APTM10AM02FG
MOSFET 2N-CH 100V 495A SP6Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM10AM02FG is a 100V, 2 N-Channel MOSFET array designed for demanding power applications. This device features a continuous drain current (Id) of 495A at 25°C and a low on-resistance (Rds On) of 2.5mOhm at 200A, 10V, enabling efficient power delivery. With a maximum power dissipation of 1250W and a chassis mount package (SP6), it is suitable for thermal management in high-power systems. Key electrical characteristics include a gate charge (Qg) of 1360nC at 10V and input capacitance (Ciss) of 40000pF at 25V. The operating temperature range is -40°C to 150°C (TJ). This component is utilized in industries requiring high-efficiency power conversion and management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1250W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 495A |
| Input Capacitance (Ciss) (Max) @ Vds | 40000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 200A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1360nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | SP6 |
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