APTM100H46FT3G
MOSFET 4N-CH 1000V 19A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology's APTM100H46FT3G is a 4 N-Channel POWER MOS 8™ MOSFET array designed for demanding power applications. This component features a 1000V (1kV) drain-source voltage (Vdss) and a continuous drain current (Id) of 19A at 25°C. With a maximum power dissipation of 357W, it is suitable for chassis mounting. Key electrical characteristics include a typical input capacitance (Ciss) of 6800pF at 25V and a gate charge (Qg) of 260nC at 10V. The on-resistance (Rds On) is specified at a maximum of 552mOhm at 16A and 10V. This MOSFET array is utilized in industries such as industrial automation, renewable energy, and electric vehicle charging. It operates within a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 357W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 19A |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 552mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP3 |
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