APTM100H45FT3G
MOSFET 4N-CH 1000V 18A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM100H45FT3G is a 1000V, 18A, 357W 4 N-channel MOSFET array housed in an SP3 chassis mount package. This device features a low on-resistance of 540mOhm at 9A and 10V, with a gate charge of 154nC at 10V and input capacitance of 4350pF at 25V. Designed for demanding applications, it operates across a temperature range of -40°C to 150°C. This power MOSFET array is suitable for use in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 357W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 18A |
| Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 25V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP3 |