APTM100H35FTG
MOSFET 4N-CH 1000V 22A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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The Microchip Technology APTM100H35FTG is a 4 N-channel MOSFET array designed for high-voltage applications. This chassis mount component offers a Drain-Source Voltage (Vdss) of 1000V (1kV) and a continuous drain current (Id) of 22A at 25°C. Featuring a low Rds On of 420mOhm at 11A and 10V, it is suitable for power conversion and control in industrial, automotive, and renewable energy systems. The APTM100H35FTG has a maximum power dissipation of 390W and an operating temperature range of -40°C to 150°C (TJ). Key parameters include an input capacitance (Ciss) of 5200pF at 25V and a gate charge (Qg) of 186nC at 10V. The component is supplied in Bulk packaging within the SP4 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 22A |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 11A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP4 |
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