APTM100H35FT3G
MOSFET 4N-CH 1000V 22A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM100H35FT3G is a 4-channel N-channel MOSFET array designed for high-voltage applications. This component features a 1000V (1kV) Drain-to-Source Voltage (Vdss) rating and a continuous drain current capability of 22A at 25°C. The device offers a maximum power dissipation of 390W and exhibits a low Rds On of 420mOhm at 11A and 10V. Gate charge (Qg) is specified at 186nC maximum at 10V, with input capacitance (Ciss) at 5200pF maximum at 25V. The APTM100H35FT3G utilizes MOSFET technology and is housed in an SP3 package for chassis mounting. Operating temperature ranges from -40°C to 150°C. This MOSFET array finds application in power factor correction, solar inverters, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 22A |
| Input Capacitance (Ciss) (Max) @ Vds | 5200pF @ 25V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 11A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP3 |