APTM100A18FTG
MOSFET 2N-CH 1000V 43A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTM100A18FTG is a 1000V (1kV) 2 N-Channel MOSFET array, configured as a half-bridge. This chassis mount device offers a continuous drain current (Id) of 43A at 25°C and a maximum power dissipation of 780W. The APTM100A18FTG features a low Rds On of 210mOhm at 21.5A and 10V, with a gate charge (Qg) of 372nC at 10V and input capacitance (Ciss) of 10400pF at 25V. The device operates within a temperature range of -40°C to 150°C (TJ) and is supplied in Bulk packaging. This component is suitable for applications in power factor correction, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 31 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 780W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 43A |
| Input Capacitance (Ciss) (Max) @ Vds | 10400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 21.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 372nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP4 |
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