APTM08TAM04PG
MOSFET 6N-CH 75V 120A SP6-PManufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology presents the APTM08TAM04PG, a 6-channel N-channel MOSFET array designed for demanding power applications. This component features a 75V drain-source voltage (Vdss) and can handle a continuous drain current (Id) of up to 120A at 25°C, with a maximum power dissipation of 138W. The low on-resistance (Rds On) of 4.5mOhm at 60A and 10V gate-source voltage (Vgs) ensures efficient power transfer.
The APTM08TAM04PG is configured as a 3-phase bridge, making it suitable for motor control, power factor correction, and uninterruptible power supply (UPS) systems. Key electrical parameters include a gate charge (Qg) of 153nC (max) at 10V and input capacitance (Ciss) of 4530pF (max) at 25V. It operates within an extended temperature range of -40°C to 150°C (TJ) and utilizes a chassis mountable SP6-P package for robust thermal management. This Metal Oxide MOSFET technology provides reliable performance in industrial and automotive power conversion circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 138W |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 120A |
| Input Capacitance (Ciss) (Max) @ Vds | 4530pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 60A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SP6-P |