APTC60VDAM45T1G
MOSFET 2N-CH 600V 49A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTC60VDAM45T1G is a 600V, 49A dual N-channel CoolMOS™ MOSFET array. This device offers a low Rds(On) of 45mOhm at 24.5A and 10V, with a maximum gate charge of 150nC at 10V. The input capacitance (Ciss) is specified at 7200pF at 25V. Featuring a chassis mountable SP1 package, this component is rated for continuous drain current of 49A at 25°C and dissipates a maximum power of 250W. The threshold voltage (Vgs(th)) is a maximum of 3.9V at 3mA. Operating temperature ranges from -40°C to 150°C. This power MOSFET is suitable for applications in power supplies, motor control, and industrial power conversion.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 49A |
| Input Capacitance (Ciss) (Max) @ Vds | 7200pF @ 25V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 24.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | SP1 |
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