APTC60VDAM24T3G
MOSFET 2N-CH 600V 95A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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The Microchip Technology APTC60VDAM24T3G is a CoolMOS™ series 600V, 2 N-Channel MOSFET array designed for high-efficiency power conversion. This component offers a continuous drain current of 95A at 25°C and a low on-resistance of 24mOhm at 47.5A, 10V, contributing to reduced conduction losses. The device features a maximum power dissipation of 462W and a gate charge of 300nC at 10V, enabling fast switching performance. With an input capacitance (Ciss) of 14400pF at 25V, it is suitable for demanding applications. The APTC60VDAM24T3G is housed in an SP3 package for chassis mounting, ensuring robust thermal management. Its operating temperature range is -40°C to 150°C. This MOSFET array finds utility in industrial power supplies, electric vehicle charging, and server power applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 462W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 95A |
| Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 47.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 5mA |
| Supplier Device Package | SP3 |
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