APTC60HM70T1G
MOSFET 4N-CH 600V 39A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTC60HM70T1G is a 4 N-channel MOSFET array designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 39A at 25°C. The on-resistance (Rds On) is a maximum of 70mOhm at 39A and 10V Vgs. With a gate charge (Qg) of 259nC (max) and input capacitance (Ciss) of 7000pF (max), this device is suitable for power factor correction (PFC) and motor drive applications. It is rated for a maximum power dissipation of 250W and operates within a temperature range of -40°C to 150°C. The device is presented in a chassis mount SP1 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 39A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 259nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Supplier Device Package | SP1 |
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