APTC60HM70RT3G
MOSFET 4N-CH 600V 39A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology presents the APTC60HM70RT3G, a 600V, 39A N-channel MOSFET array with an integrated bridge rectifier, housed in an SP3 package. This CoolMOS™ series component offers a low Rds(on) of 70mOhm at 39A and 10V Vgs, with a maximum power dissipation of 250W. Key electrical parameters include a 600V drain-to-source voltage, 259nC gate charge, and 7000pF input capacitance. It operates reliably across a temperature range of -40°C to 150°C. This high-performance power MOSFET array is suitable for applications in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Configuration | 4 N-Channel (Full Bridge) + Bridge Rectifier |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 39A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 259nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Supplier Device Package | SP3 |
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