APTC60HM70BT3G
MOSFET 4N-CH 600V 39A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology CoolMOS™ APTC60HM70BT3G is a 4-channel N-channel MOSFET array designed for high-efficiency power conversion. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 39A at 25°C. The low on-resistance (Rds On) of 70mOhm at 39A and 10V Vgs, coupled with a logic level gate drive, optimizes performance and reduces switching losses. With a maximum power dissipation of 250W and a gate charge (Qg) of 259nC at 10V, this MOSFET array is suitable for demanding applications. Its robust design includes an input capacitance (Ciss) of 700pF at 25V and a threshold voltage (Vgs(th)) of 3.9V at 2.7mA. The APTC60HM70BT3G is housed in a chassis-mountable SP3 package, facilitating efficient thermal management. This component is widely utilized in industrial power supplies, electric vehicle charging, and renewable energy systems. It is supplied in a tray.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 39A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 259nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Supplier Device Package | SP3 |
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