APTC60HM45T1G
MOSFET 4N-CH 600V 49A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTC60HM45T1G is a 600V, 49A N-channel MOSFET array designed for high-power applications. This component, housed in an SP1 package for chassis mounting, features a low on-resistance of 45mOhm at 24.5A and 10V, with a maximum continuous drain current of 49A at 25°C. The device offers a maximum power dissipation of 250W and operates across a wide temperature range of -40°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 150nC at 10V and an input capacitance (Ciss) of 7200pF at 25V. This MOSFET array is suitable for use in power factor correction, solar inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 49A |
| Input Capacitance (Ciss) (Max) @ Vds | 7200pF @ 25V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 24.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | SP1 |
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