APTC60DSKM24T3G
MOSFET 2N-CH 600V 95A SP3Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Microchip Technology APTC60DSKM24T3G is a 600V, 2 N-channel CoolMOS™ MOSFET array designed for high-efficiency power conversion applications. This component, housed in an SP3 chassis mount package, features a continuous drain current capability of 95A at 25°C and a maximum power dissipation of 462W. Key electrical characteristics include a low on-resistance of 24mOhm at 47.5A and 10V, a gate charge of 300nC at 10V, and an input capacitance of 14400pF at 25V. The APTC60DSKM24T3G is suitable for demanding applications in industrial power supplies, electric vehicle charging, and motor control systems. It operates across an extended temperature range of -40°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Dual Buck Chopper) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 462W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 95A |
| Input Capacitance (Ciss) (Max) @ Vds | 14400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 47.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 5mA |
| Supplier Device Package | SP3 |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
