APTC60AM45T1G
MOSFET 2N-CH 600V 49A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTC60AM45T1G is a 2 N-channel MOSFET array designed for high-power applications. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 49A at 25°C. The on-resistance (Rds On) is a maximum of 45mOhm at 24.5A and 10V gate-source voltage. The device has a maximum power dissipation of 250W and is housed in a chassis mountable SP1 package. Key parameters include a gate charge (Qg) of 150nC at 10V and input capacitance (Ciss) of 7200pF at 25V. The APTC60AM45T1G operates within an ambient temperature range of -40°C to 150°C. This MOSFET array is suitable for use in power factor correction, industrial power supplies, and electric vehicle charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 49A |
| Input Capacitance (Ciss) (Max) @ Vds | 7200pF @ 25V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 24.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 3mA |
| Supplier Device Package | SP1 |
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