APTC60AM35T1G
MOSFET 2N-CH 600V 72A SP1Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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Microchip Technology APTC60AM35T1G is a 2-channel, N-channel MOSFET array designed for high-power applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 72A at 25°C. The low on-resistance of 35mOhm at 72A and 10V (Vgs) minimizes conduction losses. With a maximum power dissipation of 416W, it is suitable for demanding thermal environments, utilizing a chassis mount package (SP1). Key parameters include a gate charge (Qg) of 518nC at 10V and input capacitance (Ciss) of 14000pF at 25V. This device operates across a temperature range of -40°C to 150°C (TJ). Applications span industrial power supplies, motor control, and electric vehicle power trains. The configuration is a half-bridge arrangement.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 416W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 72A |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 72A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 518nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 5.4mA |
| Supplier Device Package | SP1 |
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