APTC60AM35SCTG
MOSFET 2N-CH 600V 72A SP4Manufacturer: Microchip Technology
Categories: FET, MOSFET Arrays
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This Microchip Technology MOSFET array, part number APTC60AM35SCTG, offers a robust solution for high-power applications. Featuring two N-Channel MOSFETs configured in a half-bridge arrangement, it boasts a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 72A at 25°C. The device exhibits a low on-resistance (Rds On) of 35mOhm at 36A and 10V, with a maximum power dissipation of 416W. Key parameters include a maximum gate charge (Qg) of 518nC at 10V and a maximum input capacitance (Ciss) of 14000pF at 25V. The APTC60AM35SCTG is designed for chassis mounting in the SP4 package, operating within a temperature range of -40°C to 150°C. This component is suitable for use in power factor correction, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 416W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 72A |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 36A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 518nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 2mA |
| Supplier Device Package | SP4 |