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WE128K32-250H1M

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WE128K32-250H1M

EEPROM Module, 256K16, 250ns, Parallel, CMOS, CPGA66

Manufacturer: Microchip Technology

Categories: EEPROMs

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The Microchip Technology WE128K32-250H1M is a parallel CMOS EEPROM module offering 4 Mbit of memory density. This component is configurable as 128K x 32 or 256K x 16, with an access time of 250ns. It operates asynchronously with a supply voltage range of 4.5V to 5.5V and a nominal voltage of 5V. The module supports a write cycle time of 10ms and features a 66-pin ceramic, metal-sealed cofired grid array package (CPGA66). Operating across a wide temperature range of -55°C to +125°C, this EEPROM module is suitable for demanding applications in industrial, automotive, and aerospace sectors. Its parallel interface and robust construction make it a reliable choice for data storage and configuration management.

Additional Information

Series: WE128K32RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length27.3000
Width27.3000
TechnologyCMOS
Access_Time_Max250.0000000000000000
Additional_FeatureCONFIGURABLE AS 128K X 32
Alternate_Memory_Width8
JESD_30_CodeS-CPGA-P66
Memory_Density4194304.0000000000000000
Memory_IC_TypeEEPROM MODULE
Memory_Organization256K16
Memory_Width16
Number_of_Functions1
Number_of_Terminals66
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodePGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Parallel_SerialParallel
Programming_Voltage5
Seated_Height_Max4.3400
Supply_Current_Max250.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormPIN/PEG
Terminal_Pitch2.540
Terminal_PositionPerpendicular
Write_Cycle_Time_Max_tWC10.0000000000000000

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