AT28C256-25DM/883-023
EEPROM, 32KX8, 250ns, Parallel, CMOS, CDIP28Manufacturer: Microchip Technology
Categories: EEPROMs
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The Microchip Technology AT28C256-25DM-883-023 is a 262,144-bit (32K x 8) high-performance CMOS Electrically Erasable Programmable Read-Only Memory. It features a fast 250ns access time and supports asynchronous operation. This parallel interface memory device is housed in a 28-lead ceramic dual in-line package (CDIP), specified for operation across an extended temperature range of -55°C to +125°C. The AT28C256 series is designed for applications requiring reliable, non-volatile data storage, including aerospace, defense, and industrial systems. It operates with a supply voltage range of 4.5V to 5.5V and offers a typical write cycle time of 10ms.
Additional Information
Series: AT28C256RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 37.2150 |
| Width | 15.2400 |
| Technology | CMOS |
| Access_Time_Max | 250.0000000000000000 |
| JESD_30_Code | R-GDIP-T28 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | EEPROM |
| Memory_Organization | 32KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 28 |
| Number_of_Words | 32768.0000000000000000 |
| Number_of_Words_Code | 32k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, GLASS-SEALED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Programming_Voltage | 5 |
| Seated_Height_Max | 5.7200 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
| Write_Cycle_Time_Max_tWC | 10.0000000000000000 |
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