AT28C04E-25DMB
EEPROM, 512X8, 250ns, Parallel, CMOS, CDIP24Manufacturer: Microchip Technology
Categories: EEPROMs
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The Microchip Technology AT28C04E-25DMB is a 4 kilobit (512 x 8 bit) parallel interface CMOS Electrically Erasable Programmable Read-Only Memory. It features a maximum access time of 250 nanoseconds and a write cycle time of 200 microseconds. This device offers 100,000 endurance cycles and supports data polling for write operation confirmation. Operating across a wide temperature range of -55°C to +125°C, the AT28C04E-25DMB is specified for a nominal supply voltage of 5V. It is housed in a 24-pin Ceramic Dual In-line Package (CDIP) with through-hole mounting. This component is suitable for applications requiring non-volatile data storage in demanding environments, including aerospace and defense systems.
Additional Information
Series: AT28C04RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 250.0000000000000000 |
| Command_User_Interface | No |
| Data_Polling | Yes |
| Endurance | 100000.000000000000000 |
| JESD_30_Code | R-XDIP-T24 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | EEPROM |
| Memory_Organization | 512X8 |
| Memory_Width | 8 |
| Number_of_Terminals | 24 |
| Number_of_Words | 512.0000000000000000 |
| Number_of_Words_Code | 512 |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP24,.6 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class B (Modified) |
| Standby_Current_Max | 0.003000000000000 |
| Supply_Current_Max | 45.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
| Toggle_Bit | No |
| Write_Cycle_Time_Max_tWC | 0.2000000000000000 |
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