AT28BV256-25TU
EEPROM, 32KX8, 250ns, Parallel, CMOS, PDSO28Manufacturer: Microchip Technology
Categories: EEPROMs
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The Microchip Technology AT28BV256-25TU is a 256 Kbit (32K x 8) Electrically Erasable Programmable Read-Only Memory (EEPROM) designed for high-performance applications. This CMOS device offers a fast 250ns access time and supports asynchronous parallel interface operations. Key features include automatic write capabilities and a robust design suitable for industrial environments, operating from -40°C to +85°C. The AT28BV256-25TU is housed in a 28-lead TSOP (Thin Small Outline Package) with a 0.55mm terminal pitch, facilitating space-constrained board designs. Its typical applications span industrial control systems, automotive electronics, and data logging equipment requiring reliable non-volatile data storage. The device operates with a supply voltage range of 2.7V to 3.6V.
Additional Information
Series: AT28BV256RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 8.0000 |
| Technology | CMOS |
| Length | 11.8000 |
| Access_Time_Max | 250.0000000000000000 |
| Additional_Feature | AUTOMATIC WRITE |
| JESD_30_Code | R-PDSO-G28 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | EEPROM |
| Memory_Organization | 32KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 28 |
| Number_of_Words | 32768.0000000000000000 |
| Number_of_Words_Code | 32k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP1 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Parallel_Serial | Parallel |
| Programming_Voltage | 3 |
| Seated_Height_Max | 1.2000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 2.70000 |
| Supply_Voltage_Nom | 3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.550 |
| Terminal_Position | Dual |
| Write_Cycle_Time_Max_tWC | 10.0000000000000000 |
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