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WEDPN16M72VR-133B3I

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WEDPN16M72VR-133B3I

Synchronous DRAM, 16MX72, 5.5ns, CMOS, PBGA219

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology's WEDPN16M72VR-133B3I is a 16M x 72 Synchronous DRAM, providing 1.2 Gbit of memory capacity. This device operates with a maximum access time of 5.5ns and features a four-bank page burst access mode, designed for high-speed data transfer. Its CMOS technology ensures efficient operation within a supply voltage range of 3.0V to 3.6V, with a nominal voltage of 3.3V. The component supports auto/self refresh and LG-MAX/WD-MAX functionalities. Encased in a 219-ball PBGA (S-PBGA-B219) package with a 1.27mm terminal pitch and measuring 21.1mm x 21.1mm, it is suitable for surface-mount applications. Operating temperature ranges from -40°C to +85°C. This component finds application in telecommunications, computing, and industrial systems requiring high-bandwidth memory solutions.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length21.1000
Width21.1000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.5000000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeS-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Seated_Height_Max2.6400
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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