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WEDPN16M72VR-125B3M

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WEDPN16M72VR-125B3M

Synchronous DRAM, 16MX72, 5.8ns, CMOS, PBGA219

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology WEDPN16M72VR-125B3M is a 16M x 72 Synchronous DRAM featuring a 5.8ns access time and a CMOS technology. This component operates in a four-bank page burst mode, offering high performance for data-intensive applications. It supports auto and self-refresh functions, along with LG-MAX and WD-MAX features for enhanced reliability. The device is housed in a 219-ball PBGA (Plastic Ball Grid Array) package, measuring 21.1mm x 21.1mm with a terminal pitch of 1.27mm. Operating voltage ranges from 3.0V to 3.6V, with a nominal of 3.3V. Its operating temperature spans from -55°C to 125°C, making it suitable for demanding environments. This memory solution finds application in telecommunications, industrial control systems, and high-performance computing.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length21.1000
Width21.1000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.8000000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeS-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Seated_Height_Max2.6400
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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