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WEDPN16M72VR-100B3C

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WEDPN16M72VR-100B3C

Synchronous DRAM, 16MX72, 6ns, CMOS, PBGA219

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology WEDPN16M72VR-100B3C is a high-performance synchronous DRAM featuring a 16M word by 72-bit organization, providing a total density of 1207959552 bits. This component operates with a maximum access time of 6.0 ns and utilizes CMOS technology for efficient operation. The WEDPN16M72 series supports a FOUR BANK PAGE BURST access mode, enabling rapid data throughput. Key features include automatic and self-refresh capabilities, along with LG-MAX and WD-MAX functionalities. This device operates within a temperature range of 0°C to 70°C and requires a supply voltage between 3.0V and 3.6V, with a nominal voltage of 3.3V. It is housed in a 219-ball PBGA package with a 1.27mm terminal pitch and a seated height of 2.64mm, suitable for surface-mount applications. Common applications for this type of memory include networking equipment, industrial control systems, and high-end consumer electronics.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length21.1000
Width21.1000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max6.0000000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeS-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Seated_Height_Max2.6400
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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