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WEDPN16M72V-133B3I

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WEDPN16M72V-133B3I

Synchronous DRAM, 16MX72, 5.5ns, CMOS, PBGA219

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology's WEDPN16M72V-133B3I is a synchronous DRAM component offering a 16M x 72 memory organization. This device features a maximum access time of 5.5ns and operates in a CMOS technology. It supports a four-bank page burst access mode and includes auto/self refresh capabilities, along with LG-MAX and WD-MAX features. The component is housed in a 219-ball PBGA (Plastic Ball Grid Array) package with a 1.27mm terminal pitch and a maximum seated height of 2.64mm. Operating within an industrial temperature range of -40°C to +85°C, it requires a supply voltage between 3.0V and 3.6V. This high-density memory solution is suitable for applications in computing, networking, and industrial automation.

Additional Information

Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length21.1000
Width21.1000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.5000000000000000
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeS-PBGA-B219
Memory_Density1207959552.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization16MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Seated_Height_Max2.6400
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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