WEDPN16M72V-125B3C
Synchronous DRAM, 16MX72, 6ns, CMOS, PBGA219Manufacturer: Microchip Technology
Categories: DRAMs
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Microchip Technology WEDPN16M72V-125B3C is a synchronous DRAM with a 16M x 72 memory organization, providing a total density of 1207959552 bits. This component operates in CMOS technology and features a maximum access time of 6ns. It supports a four-bank page burst access mode and incorporates auto/self-refresh capabilities, along with LG-MAX and WD-MAX features. The device is housed in a 219-ball S-PBGA (BGA219) package with a terminal pitch of 1.27mm. Operating voltage ranges from 3.0V to 3.6V with a nominal 3.3V. The operating temperature range is 0°C to 70°C. This component finds application in areas such as telecommunications, computing, and industrial automation requiring high-speed memory solutions.
Additional Information
Series: WEDPN16M72RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 21.1000 |
| Width | 21.1000 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | S-PBGA-B219 |
| Memory_Density | 1207959552.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 16MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Seated_Height_Max | 2.6400 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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