WED48S8030E10SI
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54Manufacturer: Microchip Technology
Categories: DRAMs
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Microchip Technology's WED48S8030E10SI is a 67.11 Mb Synchronous DRAM organized as 8M x 8, featuring a 6ns access time. This CMOS component operates in synchronous mode with a four-bank page burst access mode and supports auto/self-refresh functions. It is housed in a 54-pin TSOP II (R-PDSO-G54) package, a rectangular plastic/epoxy surface-mount device with a 0.8mm terminal pitch. The operating temperature range is from -40°C to +85°C, with a supply voltage range of 3.0V to 3.6V. This memory solution is suitable for applications in consumer electronics, industrial control systems, and telecommunications infrastructure.
Additional Information
Series: WED48S8030RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.2250 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G54 |
| Memory_Density | 67108864.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 8MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 54 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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