WED416S8030A12SI
Synchronous DRAM, 8MX16, 8ns, CMOS, PDSO54Manufacturer: Microchip Technology
Categories: DRAMs
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The Microchip Technology WED416S8030A12SI is a 134,217,728-bit synchronous DRAM with an 8M x 16 memory organization. Operating with CMOS technology, this component features an 8ns access time and a 3.3V nominal supply voltage, ranging from 3.0V to 3.6V. It supports a four-bank page burst access mode and includes auto/self refresh capabilities. The device is housed in a 54-terminal, thin profile, rectangular TSOP2 package (R-PDSO-G54) with a 0.8mm terminal pitch. Applications for this device span industrial automation, consumer electronics, and telecommunications infrastructure. The operating temperature range is -40°C to +85°C.
Additional Information
Series: WED416S8030RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 22.2200 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 8.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PDSO-G54 |
| Memory_Density | 134217728.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 8MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 54 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Dual |
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