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WED416S8030A10SI

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WED416S8030A10SI

Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology's WED416S8030A10SI is a 134Mb synchronous DRAM organized as 8Mx16. This CMOS component operates with a 7ns access time and supports a four-bank page burst access mode. Key features include auto and self-refresh capabilities, suitable for applications requiring stable memory operation. The device is housed in a 54-terminal thin profile small outline package (TSOP2, R-PDSO-G54) with gull wing terminals and a 0.8mm pitch, designed for surface mounting. Operating within a temperature range of -40°C to 85°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal of 3.3V. This memory solution is well-suited for various embedded systems, industrial automation, and consumer electronics where reliable high-speed data storage is critical.

Additional Information

Series: WED416S8030RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length22.2200
Width10.1600
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max7.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PDSO-G54
Memory_Density134217728.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization8MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals54
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Seated_Height_Max1.2000
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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