WED3EG72512S-JD3
DDR1 DRAM Module, 4GX8, CMOSManufacturer: Microchip Technology
Categories: DRAMs
Quality Control: Learn More
The Microchip Technology WED3EG72512S-JD3 is a DDR1 DRAM Module with a memory organization of 4GX8 and a density of 34,359,738,368 bits. This CMOS component operates synchronously and features a Dual Bank Page Burst access mode. It supports Auto/Self Refresh functionality, indicated by its self-refresh capability. The I/O type is Common, and it is housed in an 184-terminal DIMM package. This module is suitable for applications requiring high-speed data buffering and is commonly found in networking infrastructure, industrial automation, and embedded computing systems. The supply voltage nominal is 2.5V.
Additional Information
Series: WED3EG72512RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| I_O_Type | COMMON |
| JESD_30_Code | R-XDMA-N184 |
| Memory_Density | 34359738368.0000000000000000 |
| Memory_IC_Type | DDR1 DRAM MODULE |
| Memory_Organization | 4GX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 184 |
| Number_of_Words | 4294967296.0000000000000000 |
| Number_of_Words_Code | 4G |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
W3J512M36GT-800B2M
DDR3 DRAM, 512MX36, CMOS, PBGA204
W3J512M36GT-1333B3M
DDR3 DRAM, 512MX36, CMOS, PBGA204
WEDPN16M72VR-125B3I
Synchronous DRAM, 16MX72, 5.8ns, CMOS, PBGA219