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WED3DG6435V10D1-Q

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WED3DG6435V10D1-Q

Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, PDMA144

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology's WED3DG6435V10D1-Q is a 32M x 64 Synchronous DRAM module from the WED3DG6435V10 series. This CMOS component offers a maximum clock frequency of 100 MHz and an access time of 5.4 ns, supporting common I/O. The module features a 144-terminal PDMA144 package and a memory organization of 32MX64, yielding a total density of 2Gbit. Operating within a temperature range of 0°C to 70°C, it requires a nominal supply voltage of 3.3V. This component is suitable for applications demanding high-speed data buffering and memory expansion, commonly found in networking equipment, industrial automation, and consumer electronics. The module utilizes an 8192 refresh cycle scheme and presents a 3-state output characteristic.

Additional Information

Series: WED3DG6435V10RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max5.4000000000000000
Clock_Frequency_Max100.00000
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N144
Memory_Density2147483648.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization32MX64
Memory_Width64
Number_of_Terminals144
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM144,32
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles8192
Standby_Current_Max0.016000000000000
Supply_Current_Max2280.000000000000000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch0.800
Terminal_PositionDual

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