W3J512M40KT-800B2M
DDR3L DRAM, 512MX40, CMOS, PBGA204Manufacturer: Microchip Technology
Categories: DRAMs
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Microchip Technology W3J512M40KT-800B2M is a 21.47 Gb DDR3L DRAM component featuring a 512M x 40 memory organization. This CMOS device operates in synchronous mode with a single bank page burst access mode and supports auto/self refresh functionalities. It offers extended temperature range operation from -55°C to +125°C and utilizes a 204-pin R-PBGA package with a 0.80mm terminal pitch. The component is designed for surface mounting and has a nominal supply voltage of 1.35V, with a range of 1.283V to 1.45V. Applications include high-performance computing, networking infrastructure, and industrial automation systems.
Additional Information
Series: W3J512M40RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 14.6000 |
| Width | 10.1000 |
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B204 |
| Memory_Density | 21474836480.0000000000000000 |
| Memory_IC_Type | DDR3L DRAM |
| Memory_Organization | 512MX40 |
| Memory_Width | 40 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 204 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | FBGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY, FINE PITCH |
| Seated_Height_Max | 4.1000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.45000 |
| Supply_Voltage_Min | 1.28300 |
| Supply_Voltage_Nom | 1.35 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Bottom |
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