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W3J512M40KT-1066BM

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W3J512M40KT-1066BM

DDR3L DRAM, 512MX32, CMOS, PBGA136

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology W3J512M40KT-1066BM is a 16 Gigabit DDR3L DRAM device featuring a 512M x 32 memory organization. This CMOS component operates in synchronous mode with a single bank page burst access mode. It supports auto and self-refresh functions, along with LG-MAX and WD-MAX capabilities for enhanced data integrity and performance. The device is housed in a 136-ball fine-pitch ball grid array (PBGA) package, with a terminal pitch of 0.800mm. Operating over an extended industrial temperature range of -55°C to +125°C, it utilizes a nominal supply voltage of 1.35V, with a range of 1.283V to 1.450V. This DRAM is suitable for applications in industrial automation, networking infrastructure, and consumer electronics requiring high-density, low-power memory solutions.

Additional Information

Series: W3J512M40RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
Length14.6000
Width10.1000
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B136
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR3L DRAM
Memory_Organization512MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals136
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Seated_Height_Max3.7500
Self_RefreshYes
Supply_Voltage_Max1.45000
Supply_Voltage_Min1.28300
Supply_Voltage_Nom1.35
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.800
Terminal_PositionBottom

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