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W3J512M40K-800B3M

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W3J512M40K-800B3M

DDR3L DRAM, 512MX40, CMOS, PBGA204

Manufacturer: Microchip Technology

Categories: DRAMs

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The Microchip Technology W3J512M40K-800B3M is a DDR3L DRAM component from the W3J512M40 series. This device features a memory density of 21.47 Gbit and an organization of 512M x 40, operating in synchronous mode with a SINGLE BANK PAGE BURST access mode. It utilizes CMOS technology and is housed in a 204-ball PBGA (R-PBGA-B204) package with a fine pitch of 0.800 mm. The operating temperature range spans from -55°C to +125°C, with a nominal supply voltage of 1.35V, adjustable between 1.283V and 1.45V. Additional features include auto/self refresh, LG-MAX, WD-MAX, and HT-calculated thermal capabilities. This component is suitable for demanding applications in industrial, automotive, and high-performance computing sectors requiring robust memory solutions.

Additional Information

Series: W3J512M40RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length14.6000
Width10.1000
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B204
Memory_Density21474836480.0000000000000000
Memory_IC_TypeDDR3L DRAM
Memory_Organization512MX40
Memory_Width40
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals204
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Seated_Height_Max4.1000
Self_RefreshYes
Supply_Voltage_Max1.45000
Supply_Voltage_Min1.28300
Supply_Voltage_Nom1.35
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.800
Terminal_PositionBottom

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