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W3J512M40GT-1333B3I

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W3J512M40GT-1333B3I

DDR3 DRAM, 512MX40, CMOS, PBGA204

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology W3J512M40GT-1333B3I is a DDR3 DRAM component from the W3J512M40 series. This device offers a memory density of 21.47 Gbit and a memory organization of 512M x 40, operating in synchronous mode with a single bank page burst access mode. It supports auto and self-refresh functionalities, along with LG-MAX and WD-MAX features, and is rated for operation within an industrial temperature range from -40.0°C to 85.0°C. The component utilizes CMOS technology and is housed in a 204-terminal fine-pitch ball grid array (FBGA) package with a terminal pitch of 0.80 mm. This DRAM is suitable for applications in industrial automation, networking, and high-performance computing.

Additional Information

Series: W3J512M40RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length14.6000
Width10.1000
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B204
Memory_Density21474836480.0000000000000000
Memory_IC_TypeDDR3 DRAM
Memory_Organization512MX40
Memory_Width40
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals204
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Seated_Height_Max4.1000
Self_RefreshYes
Supply_Voltage_Max1.57500
Supply_Voltage_Min1.42500
Supply_Voltage_Nom1.5
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.800
Terminal_PositionBottom

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