W3J512M40GT-1066B3M
DDR3 DRAM, 512MX40, CMOS, PBGA204Manufacturer: Microchip Technology
Categories: DRAMs
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Microchip Technology W3J512M40GT-1066B3M is a DDR3 DRAM component from the W3J512M40 series. This device offers a memory density of 21.47 Gbit, organized as 512M x 40 bits. It operates in synchronous mode with a SINGLE BANK PAGE BURST access mode and supports auto/self-refresh functionalities, including LG-MAX and WD-MAX. The component is built using CMOS technology and packaged in a 204-ball PBGA (R-PBGA-B204) with a terminal pitch of 0.80mm. Operating across a temperature range of -55°C to 125°C, it requires a supply voltage between 1.425V and 1.575V, with a nominal 1.5V. This high-performance DRAM is suitable for demanding applications in the industrial, automotive, and telecommunications sectors.
Additional Information
Series: W3J512M40RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 14.6000 |
| Width | 10.1000 |
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B204 |
| Memory_Density | 21474836480.0000000000000000 |
| Memory_IC_Type | DDR3 DRAM |
| Memory_Organization | 512MX40 |
| Memory_Width | 40 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 204 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | FBGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY, FINE PITCH |
| Seated_Height_Max | 4.1000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.57500 |
| Supply_Voltage_Min | 1.42500 |
| Supply_Voltage_Nom | 1.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Bottom |
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