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W3J512M40GT-1066B2M

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W3J512M40GT-1066B2M

DDR3 DRAM, 512MX40, CMOS, PBGA204

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology presents the W3J512M40GT-1066B2M, a high-performance DDR3 DRAM component. This memory IC features a substantial 21.47 Gb density, organized as 512M x 40 bits, operating in synchronous mode with a single bank page burst access. Key features include auto and self-refresh capabilities, LG-MAX, WD-MAX, and HT-calculated (seated height) for robust operation. The component utilizes advanced CMOS technology and is housed in a 204-terminal fine-pitch ball grid array (FBGA) package with a 0.800mm terminal pitch. Operating across a wide temperature range from -55°C to 125°C, this surface-mount device is suitable for demanding applications within the industrial and automotive sectors. The nominal supply voltage is 1.5V, with a range of 1.425V to 1.575V.

Additional Information

Series: W3J512M40RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
Length14.6000
Width10.1000
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B204
Memory_Density21474836480.0000000000000000
Memory_IC_TypeDDR3 DRAM
Memory_Organization512MX40
Memory_Width40
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals204
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Seated_Height_Max4.1000
Self_RefreshYes
Supply_Voltage_Max1.57500
Supply_Voltage_Min1.42500
Supply_Voltage_Nom1.5
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.800
Terminal_PositionBottom

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