W3J512M40G-800B3I
DDR3 DRAM, 512MX40, CMOS, PBGA204Manufacturer: Microchip Technology
Categories: DRAMs
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Microchip Technology's W3J512M40G-800B3I is a DDR3 DRAM component organized as 512M x 40, providing a total memory density of 21.47 Gb. This CMOS device operates in synchronous mode with a single bank page burst access mode. Key features include support for auto/self refresh, LG-MAX, WD-MAX, and seated HT-calculated functionality. The component is housed in a 204-terminal, 0.80mm pitch Fine-Pitch Ball Grid Array (FBGA) package, specified by JESD-30 code R-PBGA-B204. It operates within an industrial temperature range of -40°C to +85°C, with a nominal supply voltage of 1.5V, ranging from 1.425V to 1.575V. This DRAM is suitable for applications in networking, industrial automation, and consumer electronics.
Additional Information
Series: W3J512M40RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 14.6000 |
| Width | 10.1000 |
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B204 |
| Memory_Density | 21474836480.0000000000000000 |
| Memory_IC_Type | DDR3 DRAM |
| Memory_Organization | 512MX40 |
| Memory_Width | 40 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 204 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | FBGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY, FINE PITCH |
| Seated_Height_Max | 4.1000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.57500 |
| Supply_Voltage_Min | 1.42500 |
| Supply_Voltage_Nom | 1.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Bottom |
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