W3J512M40G-1333B2I
DDR3 DRAM, 512MX40, CMOS, PBGA204Manufacturer: Microchip Technology
Categories: DRAMs
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Microchip Technology's W3J512M40G-1333B2I is a DDR3 DRAM component from the W3J512M36 series. This 512M x 40 device offers a total capacity of 21.5 Gb, operating synchronously with a single bank page burst access mode. It supports auto and self-refresh functionalities, along with LG-MAX, WD-MAX, and SEATED HT-CALCULATED features. Designed for robust performance, it operates within a temperature range of -40°C to +85°C and utilizes a 1.5V nominal supply voltage. The component is housed in a 204-ball, fine-pitch ball grid array (PBGA204) package with a 0.800mm terminal pitch. This DDR3 DRAM finds application in high-performance computing, networking equipment, and industrial automation systems.
Additional Information
Series: W3J512M36RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 14.6000 |
| Width | 10.1000 |
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B204 |
| Memory_Density | 21474836480.0000000000000000 |
| Memory_IC_Type | DDR3 DRAM |
| Memory_Organization | 512MX40 |
| Memory_Width | 40 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 204 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | FBGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY, FINE PITCH |
| Seated_Height_Max | 4.1000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.57500 |
| Supply_Voltage_Min | 1.42500 |
| Supply_Voltage_Nom | 1.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Bottom |
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