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W3J512M36KT-1333B2I

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W3J512M36KT-1333B2I

DDR3L DRAM, 512MX36, CMOS, PBGA204

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology W3J512M36KT-1333B2I is a DDR3L DRAM component from the W3J512M36 series. This 512Mx36 device operates in a CMOS technology, offering a memory density of 19.3 Gb. It features a 204-ball PBGA (Plastic Ball Grid Array) package with a 0.80 mm terminal pitch, designed for surface mounting. The component supports single bank page burst access mode and includes auto/self-refresh capabilities, along with LG-MAX and WD-MAX features. Operating within a temperature range of -40°C to +85°C, this synchronous memory IC requires a supply voltage between 1.283V and 1.45V, with a nominal of 1.35V. Its applications span various industries requiring high-performance memory solutions, including networking, industrial, and consumer electronics.

Additional Information

Series: W3J512M36RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
Length14.6000
Width10.1000
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B204
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR3L DRAM
Memory_Organization512MX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals204
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Seated_Height_Max3.7500
Self_RefreshYes
Supply_Voltage_Max1.45000
Supply_Voltage_Min1.28300
Supply_Voltage_Nom1.35
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.800
Terminal_PositionBottom

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