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W3J512M36K-1333B3M

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W3J512M36K-1333B3M

DDR3L DRAM, 512MX36, CMOS, PBGA204

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology's W3J512M36K-1333B3M is a 512 Megabit x 36 bit DDR3L DRAM, offering a total density of 18.432 Gigabits. This CMOS component operates synchronously with a 1.35V nominal supply voltage, ranging from 1.283V to 1.45V. It features a 204-ball PBGA package with a 0.80mm terminal pitch, designed for surface mounting. The memory organization supports single bank page burst access mode and includes auto/self-refresh capabilities. Additional features like LG-MAX and WD-MAX indicate extended operational parameters. This DRAM is suitable for applications in computing, networking, and industrial automation demanding high-speed data processing and significant memory capacity. The operating temperature range is from -55°C to +125°C.

Additional Information

Series: W3J512M36RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
Length14.6000
Width10.1000
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B204
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR3L DRAM
Memory_Organization512MX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals204
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Seated_Height_Max4.1000
Self_RefreshYes
Supply_Voltage_Max1.45000
Supply_Voltage_Min1.28300
Supply_Voltage_Nom1.35
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.800
Terminal_PositionBottom

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