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W3J512M36GT-800B3C

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W3J512M36GT-800B3C

DDR3 DRAM, 512MX36, CMOS, PBGA204

Manufacturer: Microchip Technology

Categories: DRAMs

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Microchip Technology W3J512M36GT-800B3C is a DDR3 DRAM component from the W3J512M36 series. This device offers a memory organization of 512M words by 36 bits, resulting in a total memory density of 18 Gigabit. Operating in synchronous mode with a single bank page burst access mode, it supports auto and self-refresh functions, along with LG-MAX, WD-MAX, and HT-CALCULATED features. The component utilizes CMOS technology and is housed in a 204-ball fine-pitch ball grid array (FBGA) package with a terminal pitch of 0.800 mm. It operates within a temperature range of 0°C to 70°C and requires a supply voltage of 1.5V (nominal), with a range of 1.425V to 1.575V. This component is suitable for applications in networking, computing, and industrial automation.

Additional Information

Series: W3J512M36RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
Length14.6000
Width10.1000
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD_30_CodeR-PBGA-B204
Memory_Density19327352832.0000000000000000
Memory_IC_TypeDDR3 DRAM
Memory_Organization512MX36
Memory_Width36
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals204
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeFBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY, FINE PITCH
Seated_Height_Max4.1000
Self_RefreshYes
Supply_Voltage_Max1.57500
Supply_Voltage_Min1.42500
Supply_Voltage_Nom1.5
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.800
Terminal_PositionBottom

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