W3J512M36GT-1066B3I
DDR3 DRAM, 512MX36, CMOS, PBGA204Manufacturer: Microchip Technology
Categories: DRAMs
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The Microchip Technology W3J512M36GT-1066B3I is a 512M x 36 DDR3 DRAM component, engineered with CMOS technology. This device offers synchronous operation with a single bank page burst access mode, supporting auto and self-refresh functionalities. It is housed in a 204-terminal R-PBGA (Fine-Pitch Ball Grid Array) package, measuring 14.60mm x 10.10mm with a terminal pitch of 0.80mm. Operating across an industrial temperature range of -40°C to 85°C, it utilizes a nominal supply voltage of 1.5V, with a range of 1.425V to 1.575V. Applications for this component span across networking, computing, and industrial automation sectors. The memory organization is 512M words by 36 bits, totaling approximately 18.4 Gbits of storage.
Additional Information
Series: W3J512M36RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 14.6000 |
| Width | 10.1000 |
| Technology | CMOS |
| Access_Mode | SINGLE BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED |
| JESD_30_Code | R-PBGA-B204 |
| Memory_Density | 19327352832.0000000000000000 |
| Memory_IC_Type | DDR3 DRAM |
| Memory_Organization | 512MX36 |
| Memory_Width | 36 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 204 |
| Number_of_Words | 536870912.0000000000000000 |
| Number_of_Words_Code | 512M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | FBGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY, FINE PITCH |
| Seated_Height_Max | 4.1000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.57500 |
| Supply_Voltage_Min | 1.42500 |
| Supply_Voltage_Nom | 1.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 0.800 |
| Terminal_Position | Bottom |
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