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W3HG264M64EEU403AD4IGG

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W3HG264M64EEU403AD4IGG

DDR DRAM Module, 128MX64, 0.6ns, CMOS, PDMA200

Manufacturer: Microchip Technology

Categories: DRAMs

Quality Control: Learn More

Microchip Technology's W3HG264M64 series DDR DRAM Module, part number W3HG264M64EEU403AD4IGG, offers a 128MX64 memory organization with a maximum clock frequency of 200 MHz. This CMOS component features a 0.6ns access time and operates with a nominal supply voltage of 1.8V. Designed for a wide operating temperature range of -40°C to +85°C, it utilizes 8192 refresh cycles. The module is housed in a 200-terminal plastic/epoxy package with a terminal pitch of 0.600mm, employing dual in-line memory module (DIMM) form factor. This component is suitable for applications in telecommunications, computing, and industrial automation systems requiring high-speed data storage and retrieval. The JESD-30 code for this device is R-PDMA-N200.

Additional Information

Series: W3HG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max0.6000000000000000
Clock_Frequency_Max200.00000
I_O_TypeCOMMON
JESD_30_CodeR-PDMA-N200
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Terminals200
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIMM
Package_Equivalence_CodeDIMM200,24
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Refresh_Cycles8192
Standby_Current_Max0.112000000000000
Supply_Current_Max1184.000000000000000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_Pitch0.600
Terminal_PositionDual

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