W3DG6418V10AD1I-MG
Synchronous DRAM Module, 16MX64, 6ns, CMOSManufacturer: Microchip Technology
Categories: DRAMs
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Microchip Technology W3DG6418V10AD1I-MG is a 1Gbit Synchronous DRAM Module from the W3DG6418 series. This module features a 16M x 64 memory organization with a maximum access time of 6ns, operating within a voltage range of 3.0V to 3.6V, with a nominal supply of 3.3V. It supports a four-bank page burst access mode and incorporates auto/self-refresh capabilities. The operating temperature range is from -40°C to +85°C. This component is designed for applications in industrial control, networking equipment, and high-performance computing. The module utilizes CMOS technology and is presented in a 144-terminal DIMM package.
Additional Information
Series: W3DG6418RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 6.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N144 |
| Memory_Density | 1073741824.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 16MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 144 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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